Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-12-22
2000-03-14
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257127, 257222, 257234, 257257, H01L 2302, H01L 2904
Patent
active
060376090
ABSTRACT:
A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion. The photosensitive element has a multitier passivation layer disposed between the top contact layer and an amorphous silicon photosensor island except for a selected contact area on the top surface of the photosensor island, where the top contact layer is in electrical contact with the amorphous silicon material of the photosensor island. The passivation layer includes a first tier inorganic barrier layer which is disposed at least over the sidewalls of the photosensor island.
REFERENCES:
patent: 5132745 (1992-07-01), Kwasnick et al.
patent: 5153754 (1992-10-01), Whetten
patent: 5187369 (1993-02-01), Kingsley et al.
patent: 5191394 (1993-03-01), Saia et al.
patent: 5198694 (1993-03-01), Kwasnick et al.
patent: 5212574 (1993-05-01), Katayama et al.
patent: 5233181 (1993-08-01), Kwasnick et al.
patent: 5241192 (1993-08-01), Possin et al.
patent: 5288989 (1994-02-01), Ishaque et al.
patent: 5318664 (1994-06-01), Saia et al.
patent: 5362660 (1994-11-01), Kwasnick et al.
patent: 5370972 (1994-12-01), Saia et al.
patent: 5384271 (1995-01-01), Kwasnick et al.
patent: 5389775 (1995-02-01), Kwasnick et al.
patent: 5399884 (1995-03-01), Wei et al.
patent: 5401668 (1995-03-01), Kwasnick et al.
patent: 5435608 (1995-07-01), Wei et al.
patent: 5463225 (1995-10-01), Kwasnick et al.
patent: 5463242 (1995-10-01), Castleberry
patent: 5480810 (1996-01-01), Wei et al.
patent: 5489551 (1996-02-01), Castleberry
patent: 5498573 (1996-03-01), Whetten
patent: 5516712 (1996-05-01), Wei et al.
patent: 5517031 (1996-05-01), Wei et al.
patent: 5585280 (1996-12-01), Kwasnick et al.
patent: 5610403 (1997-03-01), Kingsley et al.
patent: 5610404 (1997-03-01), Possin
patent: 5631473 (1997-05-01), Possin et al.
patent: 5648654 (1997-07-01), Possin
patent: 5663577 (1997-09-01), Kwasnick et al.
patent: 5930607 (1999-07-01), Satou
Japanese Patent Abstract.
Internatnional Search Report.
Copending U.S. Patent Appliccation Serial No. 08/772,446, filed Dec. 23, 1996, by George E. Possin et al., entitled "Radiation Imager with Discontinuous Dielectric".
Copending U.S. Patent Appliccation Serial No. 08/77,368, filed Dec. 23, 1996, by Janqiang Liu et al., entitled "Photosensitive Imager Contact".
Copending U.S. Pat. Appliccation Serial No. 08/772,453, filed Dec. 23, 1996, by Robert F. Kwasnick et al., entitled "Contact Pads for Radiation Imagers".
Copending U.S. Patent Appliccation RD-25566, by Douglas Albagli et al., entitled "High Resolution Radiation Imager".
Kwasnick Robert Forrest
Liu Jianqiang
Wei Ching-Yeu
Abraham Fetsum
General Electric Company
Ingraham Donald S.
Stoner Douglas E.
LandOfFree
Corrosion resistant imager does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Corrosion resistant imager, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Corrosion resistant imager will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-171646