Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-07-18
2006-07-18
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S736000, C438S612000
Reexamination Certificate
active
07078796
ABSTRACT:
The invention provides an integrated device with corrosion-resistant capped copper bond pads. The capped copper bond pads include at least one copper bond pad on a semiconductor substrate. An activation layer comprising one of immersion palladium, electroless cobalt, or immersion ruthernium is disposed on the copper bond pad. A first intermediate layer of electroless nickel-boron alloy is disposed on the activation layer. A second intermediate layer comprising one of electroless nickel or electroless palladium is disposed on the first intermediate layer, and an immersion gold layer is disposed on the second intermediate layer. A capped copper bond pad and a method of forming the capped copper bond pads are also disclosed.
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Blake Terance
Chelini Remy J.
Dean Timothy B.
Dunn Gregory J.
Fay Owen R.
Cardinal Law Group
Freescale Semiconductor Inc.
Owens Douglas W
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