Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-01-11
2009-12-22
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE27048
Reexamination Certificate
active
07635908
ABSTRACT:
The invention relates to a method for producing a capacitor arrangement, and to a corresponding capacitor arrangement, wherein the first insulating layer is formed at the surface of a carrier substrate and a first capacitor electrode with a multiplicity of interspaced first interconnects is produced in said insulating layer. Using a mask layer, partial regions of the first insulating layer are removed for the purpose of uncovering the multiplicity of first interconnects, and after the formation of a capacitor dielectric at the surface of the uncovered first interconnects, a second capacitor electrode is formed with a multiplicity of interspaced second interconnects lying between the first interconnects coated with capacitor dielectric. This additionally simplified production method enables self-aligning and cost-effective production of capacitors having a high capacitance per unit area and mechanical stability.
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Barth Hans-Joachim
Tews Helmut
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Prenty Mark
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