Corresponding capacitor arrangement and method for making...

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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C438S386000, C438S393000, C257SE29343

Reexamination Certificate

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07915132

ABSTRACT:
The invention relates to a method for producing a capacitor arrangement, and to a corresponding capacitor arrangement, wherein the first insulating layer is formed at the surface of a carrier substrate and a first capacitor electrode with a multiplicity of interspaced first interconnects is produced in said insulating layer. Using a mask layer, partial regions of the first insulating layer are removed for the purpose of uncovering the multiplicity of first interconnects, and after the formation of a capacitor dielectric at the surface of the uncovered first interconnects, a second capacitor electrode is formed with a multiplicity of interspaced second interconnects lying between the first interconnects coated with capacitor dielectric. This additionally simplified production method enables self-aligning and cost-effective production of capacitors having a high capacitance per unit area and mechanical stability.

REFERENCES:
patent: 6559004 (2003-05-01), Yang et al.
patent: 6620701 (2003-09-01), Ning
patent: 6794726 (2004-09-01), Radens et al.

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