Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1983-05-31
1985-10-22
Downey, Mary F.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430323, 430331, 430961, 427 38, 156643, G03F 900
Patent
active
045488835
ABSTRACT:
A lithographic mask is corrected by ion beam removal of material at the location of a defect after the mask is initially formed. In the case of defects due to excess material (opaque defects), the ion beam removes the excess opaque material. In the case of pinholes (clear defects), the substrate (typically glass) is rendered opaque. The ion beam may be used for imaging the defect, typically by detection of secondary electrons or photons emitted where the ion beam impinges on the mask. Optical masks (visible, ultraviolet) and X-ray masks, among others, can be corrected.
REFERENCES:
patent: 3748975 (1973-07-01), Tarabocchia
patent: 4085330 (1978-04-01), Wolfe
patent: 4253029 (1981-02-01), Lepselter et al.
Hawley, Condensed Chemical Dictionary, 8th Ed., Van Nostrand Reinhold Co., New York, 1971, p. 822.
Enrlich et al., IEEE Electron Device Letters, vol. EDL-1, No. 6, Jun. 1980, pp. 101-103.
Gloersen, "Masking for Ion Beam Etching", Solid State Technology, Apr., 1976, pp. 68-73.
"1X Mask and Reticle Technology," Semiconductor International, 1983, pp. 40-45, P. S. Burggraaf.
"A Microprocessor-Controlled Mask Inspection and Repair System," Solid State Technology, R. A. Kaplan, 1976, pp. 74-78.
"One-Step Repair of Transparent Defects in Hard-Surface Photolithographic Masks Via Laser Photodeposition," IEEE Electron Device Letters, vol. EDL-1, D. J. Ehrlich et al., 1980, pp. 101-103.
"Direct Writing of Refractory Metal Thin Film Structures by Laser Photodeposition," Journal of the Electrochemical Society, D. J. Ehrlich et al., 1981, pp. 2039-2041.
AT&T Bell Laboratories
Dees Jos,e G.
Downey Mary F.
Fox James H.
LandOfFree
Correction of lithographic masks does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Correction of lithographic masks, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Correction of lithographic masks will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-122053