Correction method leading to a uniform threshold voltage distrib

Details Correction method leading to a uniform threshold voltage distrib Correction method leading to a uniform threshold voltage distrib

1995-09-26

1997-03-04

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518529, 36518533, 365218, G11C 1300

Patent

active

056086725

ABSTRACT:
A method for correcting over-corrected memory cells in a flash EPROM. The flash EPROM includes an array of memory cells (25), where each of the cells includes a gate 18, a floating gate (16), a source (12), a drain (14), and a substrate (10). The method includes bulk erasing each of cells in the array of cells (step 40), which results in a plurality of over-erased cells. The over-erased cells are then corrected (step 42), which results in a plurality of over-corrected cells. The over-corrected cells are identified (step 44) and selectively erased (step 46), such that a uniform threshold voltage distribution (54) is provided for the cells in the flash EPROM.

REFERENCES:
patent: 5357463 (1994-10-01), Kinney
patent: 5406521 (1995-04-01), Hara
patent: 5416738 (1995-05-01), Shrivastava
patent: 5424993 (1995-06-01), Lee et al.

Affiliated with

Also associated with

Rating

Correction method leading to a uniform threshold voltage distrib does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Correction method leading to a uniform threshold voltage distrib, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Correction method leading to a uniform threshold voltage distrib will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2151979