Correction method and correction apparatus of mask pattern

Image analysis – Applications – Manufacturing or product inspection

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355 53, 355 55, 430 30, 700 57, G06K 900, G03B 2752, G03B 2742, G06F 1900, G06F 900

Patent

active

060582030

ABSTRACT:
A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.

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patent: 5792581 (1998-08-01), Ohnuma

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