Correction method and correction apparatus of mask pattern

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36416703, 39550022, G06F 1900

Patent

active

060422572

ABSTRACT:
A method of correction of a mask pattern in which the mask pattern of a photomask to be used in a photolithographic step is deformed so that a transfer image near a desired design pattern is obtained, including an evaluation point arrangement step for arranging a plurality of evaluation points along an outer periphery of the desired design pattern; a simulation step for simulating the transfer image to be obtained where exposure is carried out under predetermined transfer conditions by using a photomask of a design pattern given the evaluation points; a comparison step for comparing a difference between the simulated transfer image and the design pattern for every evaluation point; and a deformation step for deforming the design pattern according to the difference compared for every evaluation point so that the difference becomes smaller and a correction apparatus for the same.

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patent: 5432044 (1995-07-01), Shimizu
patent: 5656402 (1997-08-01), Kasuga
patent: 5736280 (1998-04-01), Tsudaka
patent: 5792581 (1998-08-01), Ohnuma
patent: 5798195 (1998-08-01), Nishi
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka

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