Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-09-30
2000-11-21
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257774, H01L 23485
Patent
active
061507237
ABSTRACT:
A multilayer interconnected electronic component having increased electromigration lifetime is provided. The interconnections are in the form of studs and comprise vertical side walls having a refractory metal diffusion barrier liner along the sidewalls. The stud does not have a barrier layer at the base thereof and the base of the stud contacts the metallization on the dielectric layer of the component. An adhesion layer can be provided between the base of the stud and the surface of the metallization and the adhesion layer may be continuous or discontinuous. The adhesion layer is preferably a metal such as aluminum which dissolves in the stud or metallization upon heating of the component during fabrication or otherwise during use of the component. A preferred component utilizes a dual Damascene structure.
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Geffken Robert M.
Harper James M. E.
Everhart Caridad
International Business Machines - Corporation
Tomaszewski John J.
Walter, Jr. Howard J.
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