Copper stabilized dipping solution for a photovoltaic device inc

Details Copper stabilized dipping solution for a photovoltaic device inc Copper stabilized dipping solution for a photovoltaic device inc

1981-06-17

1983-03-22

Hoffman, James R.

Coating processes

Electrical product produced

Photoelectric

427 74, 136260, H01L 3118, H01L 3102, B05D 136

Patent

active

043776043

ABSTRACT:
A copper stabilized dipping solution for a photovoltaic device incorporating a Cu.sub.x S layer. The dipping solution contains copper metal which stabilizes the solution by providing a source of copper to continuously reduce CU.sup.++ ions to Cu.sup.+ ions. The copper has no adverse effect on the topochemical formation of a copper sulfide layer on, for example, a semiconductor cadmium sulfide layer in a photovoltaic device. Preferably, the copper stabilized dipping solution has a pH less than about 4.5 and includes counter ions such as chloride or bromide ions.

REFERENCES:
patent: 4086101 (1978-04-01), Jordan et al.
patent: 4143235 (1979-08-01), Duisman
Jindra et al., "Preparation of High-Purity CuCl", Chemicky Orumysl, vol. 15, No. 9, pp. 560-561 (1965).
Kirk-Othmer's Encyclopedia of Chemical Technology, vol. 6, p. 271.

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