Copper polish slurry for reduced interlayer dielectric...

Details Copper polish slurry for reduced interlayer dielectric... Copper polish slurry for reduced interlayer dielectric...

2005-01-04

2005-01-04

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C252S079100, C252S079400

Reexamination Certificate

active

06838383

ABSTRACT:
Slurries for use in the chemical mechanical polishing (CMP) of copper and copper diffusion barriers that reduce pattern sensitive erosion of an underlying dielectric layer include at least one surfactant. Inclusion of surfactants, such as cetyltrimethylammonium bromide in a slurry mixture can reduce pattern sensitive erosion of dielectric materials such as silicon oxide, and fluorinated oxides of silicon that would otherwise occur during CMP of copper and copper diffusion barriers as is typical in the formation of copper interconnect lines in integrated circuits.

REFERENCES:
patent: 5527423 (1996-06-01), Neville et al.
patent: 5575706 (1996-11-01), Tsai et al.
patent: 5700383 (1997-12-01), Feller et al.
patent: 5728308 (1998-03-01), Muroyama
patent: 5830265 (1998-11-01), Tsang et al.
patent: 5904159 (1999-05-01), Kato et al.
patent: 5954997 (1999-09-01), Kaufman et al.
patent: 6045435 (2000-04-01), Bajaj et al.
patent: 6083419 (2000-07-01), Grumbine et al.

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