Copper pellet for reducing electromigration effects associated w

Details Copper pellet for reducing electromigration effects associated w Copper pellet for reducing electromigration effects associated w

1996-08-19

1997-07-08

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257762, 257763, 257764, 257765, 257915, H01L 23522, H01L 23532

Patent

active

056464487

ABSTRACT:
A multilayer semiconductor structure includes a conductive via. The conductive via includes a pellet of metal having a high resistance to electromigration. The pellet is made from a conformal layer of copper or gold deposited over the via to form a copper or gold reservoir or contact located in the via. A barrier layer is provided between the reservoir and an insulating layer to prevent the pellet from diffusing into the insulating layer. The pellet can be formed by selective deposition or by etching a conformal layer. The conformal layer can be deposited by sputtering, collimated sputtering, chemical vapor deposition (CVD), dipping, evaporating, or by other means. The barrier layer and pellet may be etched by anisotropic dry etching, plasma-assisted etching, or other layer removal techniques.

REFERENCES:
patent: 5243222 (1993-09-01), Harper et al.
patent: 5403781 (1995-04-01), Matsumoto et al.
patent: 5442235 (1995-08-01), Parrillo et al.
patent: 5459353 (1995-10-01), Kanazawa

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