Copper oxide/N-silicon heterojunction photovoltaic device

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29572, 136265, 357 30, 427 74, H01L 3106, H01L 3118

Patent

active

043607020

ABSTRACT:
A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O
-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

REFERENCES:
patent: 2537256 (1951-01-01), Brattain
V. F. Drobny et al., "The Photovoltaic Properties of Thin Copper Oxide Films", Conf. Record, 13th IEEE Photovoltaic Specialists Conf." (1978), pp. 180-183.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Copper oxide/N-silicon heterojunction photovoltaic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Copper oxide/N-silicon heterojunction photovoltaic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper oxide/N-silicon heterojunction photovoltaic device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1880335

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.