Copper metallization for dielectric materials

Coating processes – Electrical product produced – Condenser or capacitor

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427 80, 427 88, 427 96, 4273762, 427380, H05K 312

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045116016

ABSTRACT:
A method of providing a copper metallization on a dielectric or semiconductive body, and a dielectric or semiconductive body having a metallization consisting essentially of copper. According to the method, a mixture of copper oxide powder and 0 to 15 weight percent reduction-resistant glass frit is dispersed in an organic vehicle and a solvent to produce a paste. The paste is applied to the body to provide a coating thereon. The coating is dried to remove the solvent, and then the coated body is fired in an oxidizing atmosphere at a temperature below the melting temperature of the glass frit to remove the organic vehicle. Finally, the coated body is fired a second time in an atmosphere which is reducing to the copper oxide but substantially nonreducing to the glass frit. The second firing is at a temperature from 700.degree. to 1050.degree. C. for from 120 to 15 minutes to convert the copper oxide to copper metal. The metallized body may comprise a reduction-resistant dielectric body and a metallization consisting essentially of copper, with no glass frit.

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Marion, R. H. et al., "Non-Noble Termination Method for Chip Capacitors," The International Journal for Hybrid Microelectronics, vol. 5, No. 2, 1982, pp. 50-53.

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