Copper metalized ohmic contact electrode of compound device

Details Copper metalized ohmic contact electrode of compound device Copper metalized ohmic contact electrode of compound device

2008-05-06

2008-05-06

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S624000, C257S743000, C257S744000, C257SE29143, C257SE21046, C257SE21062

Reexamination Certificate

active

11377302

ABSTRACT:
The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.

REFERENCES:
patent: 3965279 (1976-06-01), Levinstein et al.
patent: 4011583 (1977-03-01), Levinstein et al.
patent: 6552371 (2003-04-01), Levine et al.
patent: 6573599 (2003-06-01), Burton et al.
patent: 2004/0113216 (2004-06-01), Liu et al.
patent: 2004/0224473 (2004-11-01), Chua et al.
patent: 2006/0292785 (2006-12-01), Chang et al.

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