Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-01-01
2008-01-01
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C257SE21576
Reexamination Certificate
active
11201203
ABSTRACT:
A copper line on a semiconductor device and a method for forming the same is disclosed, wherein an insulating layer is deposited so as to minimize the dishing of IMD without using a dummy area when performing the planarization process. The method of forming the copper line on the semiconductor device includes the steps of forming an IMD on a semiconductor substrate including a lower metal layer, forming an isolation layer on the IMD, exposing the lower metal layer by patterning the IMD and the isolation layer, forming a copper layer on the exposed lower metal layer and the isolation layer, and planarizing the copper layer.
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Coleman W. David
Dongbu Electronics Co. Ltd.
McKenna Long & Aldridge LLP
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