Copper interconnects with metal capping layer and selective...

Details Copper interconnects with metal capping layer and selective... Copper interconnects with metal capping layer and selective...

2005-12-27

2005-12-27

Lebentritt, Michael (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S694000, C438S361000, C438S687000

Reexamination Certificate

active

06979625

ABSTRACT:
High reliable copper interconnects are formed with copper or a low resistivity copper alloy filling relatively narrow openings and partially filling relatively wider openings and a copper alloy having improved electromigration resistance selectively deposited in the relatively wider openings. The filled openings are recessed and a metal capping layer deposited followed by CMP. The metal capping layer prevents diffusion along the copper-capping layer interface while the copper alloy filling the relatively wider openings impedes electromigration along the grain boundaries.

REFERENCES:
patent: 6433402 (2002-08-01), Woo et al.

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