Copper interconnection structure and method of preparing same

Electricity: conductors and insulators – Conduits – cables or conductors – Preformed panel circuit arrangement

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174256, 174257, 174261, 174262, H05K 100

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054302587

ABSTRACT:
A method of preparing a Cu interconnection structure includes the following steps in the sequence: (a) depositing a Cu layer on a substrate layer; (b) depositing an Al layer on said Cu layer; (c) heating said Al layer and said Cu layer at a temperature ranging from 300.degree. C. to 550.degree. C. so as to transform said Al layer into a layer of alloy consisting of Al and Cu; and (d) depositing an insulating layer containing SiO.sub.2 on the alloy layer. Oxidation of Cu is suppressed by the formation of Al.sub.2 O.sub.3 on the outer surface of the alloy layer. Therefore, increase of electrical resistance of the Cu interconnection structure is substantially suppressed.

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Knuyt, "Electrical Resistivity Calculations for Amorphous Cu.sub.x Al.sub.1-x ", Phys. Stat. Sol (6) 123, (1984), pp. 763-771.

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