Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-01-01
2008-01-01
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257SE21575, C438S687000, C438S508000, C438S508000
Reexamination Certificate
active
11183730
ABSTRACT:
A copper interconnection where holes in the vicinity of an interface are reduced to lower contribution of interface diffusion to Cu the EM, increase a lifetime, and simultaneously increase adhesiveness and resistance to stress migration is constituted in a manner that impurities15form a solid solution in the vicinity of an interface between a Cu layer16and a barrier metal layer12, the impurities are precipitated, and an amorphous Cu layer14is fabricated, or a compound with Cu is fabricated. The copper interconnection is also constituted in a manner that impurities15form a solid solution in the vicinity of an interface between the Cu layer16and a cap layer19, the impurities15are precipitated, and an amorphous Cu layer14is fabricated, or a compound with Cu is fabricated.
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Hoang Quoc
NEC Electronics Corporation
Scully , Scott, Murphy & Presser, P.C.
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