Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-01-01
2008-01-01
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257SE21575, C438S687000, C438S508000, C438S508000
Reexamination Certificate
active
07315084
ABSTRACT:
A copper interconnection where holes in the vicinity of an interface are reduced to lower contribution of interface diffusion to Cu the EM, increase a lifetime, and simultaneously increase adhesiveness and resistance to stress migration is constituted in a manner that impurities15form a solid solution in the vicinity of an interface between a Cu layer16and a barrier metal layer12, the impurities are precipitated, and an amorphous Cu layer14is fabricated, or a compound with Cu is fabricated. The copper interconnection is also constituted in a manner that impurities15form a solid solution in the vicinity of an interface between the Cu layer16and a cap layer19, the impurities15are precipitated, and an amorphous Cu layer14is fabricated, or a compound with Cu is fabricated.
REFERENCES:
patent: 5801444 (1998-09-01), Aboelfotoh et al.
patent: 6492266 (2002-12-01), Ngo et al.
patent: 6498098 (2002-12-01), Abe
patent: 6613686 (2003-09-01), Nishizawa
patent: 6703307 (2004-03-01), Lopatin et al.
patent: 6703308 (2004-03-01), Besser et al.
patent: 2002/0001944 (2002-01-01), Faust et al.
patent: 2002/0009880 (2002-01-01), Jiang et al.
patent: 01-248538 (1989-10-01), None
patent: HEI 08-107110 (1996-04-01), None
patent: 09-20942 (1997-01-01), None
patent: 11-045887 (1999-02-01), None
patent: 11-297696 (1999-10-01), None
patent: 11-330001 (1999-11-01), None
patent: 11-340229 (1999-12-01), None
patent: 2000-174027 (2000-06-01), None
Dirks A.G. et al., “Al-Ti-Si Thin Alloy Films”, Journal of Applied Physics 59(6):2010-1014 (1986).
Hoang Quoc
NEC Electronics Corporation
Scully , Scott, Murphy & Presser, P.C.
LandOfFree
Copper interconnection and the method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Copper interconnection and the method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper interconnection and the method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2773102