Copper(I) complexes and processes for deposition of copper...

Details Copper(I) complexes and processes for deposition of copper... Copper(I) complexes and processes for deposition of copper...

2006-08-07

2009-02-10

Kopec, Mark (Department: 1796)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C427S124000, C427S096800, C427S250000, C544S253000, C544S278000, C556S110000

Reexamination Certificate

active

07488435

ABSTRACT:
The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process.

REFERENCES:
patent: 7371880 (2008-05-01), Xu et al.
patent: 2003/0135061 (2003-07-01), Norman et al.
patent: 2005/0227007 (2005-10-01), Bradley et al.
patent: 2006/0099343 (2006-05-01), Thompson et al.
patent: WO 03/095701 (2003-11-01), None
patent: WO 2004/094689 (2004-11-01), None
patent: WO 2006/015200 (2006-02-01), None
patent: WO 2006/033731 (2006-03-01), None
patent: WO 2008/018861 (2008-02-01), None
Ritala et al., “Atomic Layer Deposition”, Handbook of Thin Film Materials, H.S. Nalwa, Editor, Academic Press, San Diego (2001), vol. 1., Chap. 2.
PCT International Search Report and Written Opinion for International Application No. PCT/US2006/030707 dated May 8, 2007.

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