Etching a substrate: processes – Gas phase and nongaseous phase etching on the same substrate
Patent
1994-07-19
1995-07-11
Powell, William
Etching a substrate: processes
Gas phase and nongaseous phase etching on the same substrate
252 791, 216 65, 216 67, 216107, B44C 122, C23F 100
Patent
active
054317746
ABSTRACT:
A dry etch for metals such as copper using .pi.-acids in an energetic environment such as a plasma, laser, or afterglow reactor (102) or by using ligands forming volatiles at low temperature within a pulsed energetic environment.
REFERENCES:
patent: 4490211 (1984-12-01), Chen et al.
patent: 5085731 (1992-02-01), Norman et al.
patent: 5098516 (1992-03-01), Norman et al.
Donaldson Richard L.
Hoel Carlton H.
Powell William
Stoltz Richard A.
Texas Instruments Incorporated
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