Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-03-28
2006-03-28
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000
Reexamination Certificate
active
07019399
ABSTRACT:
The invention relatse to a copper diffusion barrier which includes a diamond-like material includes carbon, hydrogen, silicon, oxygen and a metal and is a copper diffusion barrier. Another aspect of the invention relates to an integrated circuit which includes a copper interconnect, a dielectric material and the copper diffusion barrier.
REFERENCES:
patent: 5786068 (1998-07-01), Dorfman et al.
patent: 6015597 (2000-01-01), David
patent: 6300236 (2001-10-01), Harper et al.
Venkatraman, C., et al., “Electrical perperties of diamond-like nanocomposite coatings”, 1997, Thin Solid Films, Elsevier Science, pp. 173-177.
“Lithographic Patterns With a Barrier Liner”, Mar. 1, 1990, IBM Tech. Dis. Bul. (ITDB), vol. 32 No. 10B, pp. 114-115.
Brodbeck Cyndi L
Kirk Matthew P.
Venkatraman Chandra
Rogalskyj & Weyand LLP
Weiss Howard
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