Copper damascene chemical mechanical polishing (CMP) for...

Details Copper damascene chemical mechanical polishing (CMP) for... Copper damascene chemical mechanical polishing (CMP) for...

2008-07-08

2008-07-08

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S626000, C438S631000, C438S693000

Reexamination Certificate

active

11584027

ABSTRACT:
In one method and embodiment of the present invention, at least one coil layer is formed in a write head, using a two-slurry step of copper damascene chemical mechanical polishing method with a first slurry step removing the undesirable copper that is on top of the tantalum barrier layer and on top of the trenches and a second slurry step removing the remainder of the undesirable copper, the tantalum barrier layer, the silicon dioxide hard mask layer, the hard baked photoresist layer, the magnetic alloy such as NiFe, CoFe, or CoNiFe, and alumina insulating layer for better thin film magnetic head performances.

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