Copper damascene chemical mechanical polishing (CMP) for...

Details Copper damascene chemical mechanical polishing (CMP) for... Copper damascene chemical mechanical polishing (CMP) for...

2008-07-08

2008-07-08

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S626000, C438S631000, C438S693000

Reexamination Certificate

active

07396768

ABSTRACT:
In one method and embodiment of the present invention, at least one coil layer is formed in a write head, using a two-slurry step of copper damascene chemical mechanical polishing method with a first slurry step removing the undesirable copper that is on top of the tantalum barrier layer and on top of the trenches and a second slurry step removing the remainder of the undesirable copper, the tantalum barrier layer, the silicon dioxide hard mask layer, the hard baked photoresist layer, the magnetic alloy such as NiFe, CoFe, or CoNiFe, and alumina insulating layer for better thin film magnetic head performances.

REFERENCES:
patent: 6332989 (2001-12-01), Yang et al.
patent: 6510022 (2003-01-01), Lahiri et al.
patent: 6585568 (2003-07-01), Tsuchiya et al.
patent: 6632377 (2003-10-01), Brusic et al.
patent: 6804879 (2004-10-01), Hsiao et al.
patent: 6825117 (2004-11-01), Miller et al.
patent: 6852631 (2005-02-01), Miller
patent: 2005/0047014 (2005-03-01), Bedell et al.
patent: 2005/0153556 (2005-07-01), Chopra et al.
patent: 2005/0255693 (2005-11-01), Liu et al.
patent: 2007/0148953 (2007-06-01), Itani et al.

Affiliated with

Also associated with

Rating

Copper damascene chemical mechanical polishing (CMP) for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Copper damascene chemical mechanical polishing (CMP) for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper damascene chemical mechanical polishing (CMP) for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2756433