Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-07-31
2007-07-31
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S780000
Reexamination Certificate
active
10776448
ABSTRACT:
The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
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Datta Madhav
Emory Dave
Joshi Subhash M.
Menezes Susanne
Suh Doowon
Intel Corporation
Pham Long
LandOfFree
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