Copper-containing C4 ball-limiting metallurgy stack for...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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C257S780000

Reexamination Certificate

active

10776448

ABSTRACT:
The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

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