Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-02-08
2005-02-08
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C438S737000, C438S750000, C438S753000
Reexamination Certificate
active
06853076
ABSTRACT:
The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
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“Chromium Copper Step Phasing”,IBM Technical Disclosure Bulletin, (Aug. 1, 1977), pp. 1005-1006.
Tummala, Rao, et al., “Microelectronics Packaging Handbook, Semiconductor Packaging”, Part 2, 2nd Edition, (1997), pp. 132-139.
Datta Madhav
Emory Dave
Joshi Subhash M.
Menezes Susanne
Suh Doowon
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Pham Long
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