Copper complexes and process for formation of...

Details Copper complexes and process for formation of... Copper complexes and process for formation of...

2006-01-31

2006-01-31

Nazario-Gonzalez, Porfirio (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

C556S012000, C556S040000, C556S117000, C427S248100, C427S587000, C438S687000

Reexamination Certificate

active

06992200

ABSTRACT:
Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing β-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I):wherein Z is hydrogen or alkyl; X is a group represented by the formula (I—I), in which Rais alkylene, and each of Rb, Rcand Rdis alkyl; and Y is an alkyl group or a group represented by the formula (I—I), in which Rais alkylene, and each of Rb, Rcand Rdis alkyl.

REFERENCES:
patent: 6090960 (2000-07-01), Senzaki et al.
patent: 6372928 (2002-04-01), Kawaguchi et al.
patent: 6642401 (2003-11-01), Watanabe et al.
patent: 6838573 (2005-01-01), Farnia et al.

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