Copper CMP slurry composition

Abrasive tool making process – material – or composition – With inorganic material

Reexamination Certificate

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C106S003000

Reexamination Certificate

active

07964005

ABSTRACT:
A composition that rapidly passivates copper-containing surface to yield a uniform layer of insoluble copper oxide, the composition being useful in chemical-mechanical planarization of copper-containing surfaces is disclosed. The composition is a solution having a pH of equal to or greater than 9 and having an oxidation potential sufficient to oxidize the surface to form non-soluble copper oxides. Also disclosed are methods of making and using the composition.

REFERENCES:
patent: 4632727 (1986-12-01), Nelson
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4910155 (1990-03-01), Cote et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 4954142 (1990-09-01), Carr et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5137544 (1992-08-01), Medellin
patent: 5157876 (1992-10-01), Medellin
patent: 5209816 (1993-05-01), Yu et al.
patent: 5225034 (1993-07-01), Yu et al.
patent: 5245790 (1993-09-01), Jerbic
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5354490 (1994-10-01), Yu et al.
patent: 5476606 (1995-12-01), Brancaleoni et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5575837 (1996-11-01), Kodama et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5800577 (1998-09-01), Kido
patent: 5840629 (1998-11-01), Carpio
patent: 5897375 (1999-04-01), Watts et al.
patent: 6126514 (2000-10-01), Muroyama
patent: 6126853 (2000-10-01), Kaufman et al.
patent: 6309560 (2001-10-01), Kaufman et al.
patent: 6313039 (2001-11-01), Small et al.
patent: 6368955 (2002-04-01), Easter et al.
patent: 6383240 (2002-05-01), Nishimoto et al.
patent: 6432828 (2002-08-01), Kaufman et al.
patent: 6447371 (2002-09-01), Brusic Kaufman et al.
patent: 6569350 (2003-05-01), Kaufman et al.
patent: 6589099 (2003-07-01), Haggart et al.
patent: 6676484 (2004-01-01), Chopra
patent: 6831015 (2004-12-01), Inoue et al.
patent: 2001/0051433 (2001-12-01), Francis et al.
patent: 2002/0017064 (2002-02-01), Shimazu et al.
patent: 2002/0066234 (2002-06-01), Cote et al.
patent: 2003/0153188 (2003-08-01), Shimazu et al.
patent: 2003/0212283 (2003-11-01), Parker et al.
patent: 2004/0144755 (2004-07-01), Motonari et al.
patent: 2004/0226918 (2004-11-01), Lee et al.
patent: 2005/0252092 (2005-11-01), Kim et al.
patent: 1096556 (2001-05-01), None
patent: 2006-316167 (2006-11-01), None
patent: WO 98/42790 (1998-10-01), None
patent: WO 98/42791 (1998-10-01), None
patent: WO 2005/047410 (2005-05-01), None
Chan et al. “Oxide Film Formation and Oxigen Adsorption on Copper in Aqueous Media as Probed by Surface-Enhanced Raman Spectroscopy”, Journal of Physical Chemistry, B, 103: 357-365, 1999.
Feng et al. “Corrosion Mechanisms and Products of Copper in Aqueous Solutions at Various pH Values”, Corrosion, 53(5): 398-407, May 1997.
Hamilton et al. “In Situ Raman Spectroscopy of Anodic Films Formed on Copper and Silver in Sodium Hydroxide Solution”, Journal of the Electrochemical Society, 139: 739-745, 1986.
Kunze et al. “In Situ Scanning Tunneling Microscopy Study of the Anodic Oxidation of Cu(111) in 0.1 M NaOH”, Journal of Physical Chemistry B, 105: 4263-4269, 2001.
Maurice et al. “In Situ Scanning Tunneling Microscope Study of the Passivation of Cu(111)”, Journal of the Electrochemical Society, 146(2): 524-530, 1999.
Maurice et al. “In Situ STM Study of the Initial Stages of Oxidation of Cu(111) in Aqueous Solution”, Surface Science, 458: 185-194, 2000.
Mayer et al. “An In Situ Raman Spectroscopy Study of the Anodic Oxidation of Copper in Alkaline Media”, Journal of Electrochemical Society, 139(2): 426-434, Feb. 1992.
Melendres et al. “In-Situ Synchrotron Far Infrared Spectroscopy of Surface Films on a Copper Electrode in Aqueous Solutions”, Journal of Electroanalytical Chemistry, 449: 215-218, 1998.
Steigerwald et al. “Electrochemical Potential Measurements During the Chemical-Mechanical Polishing of Copper Thin Films”, Journal of the Electrochemical Society, 142(7): 2379-2385, Jul. 1995.
Strehblow et al. “The Investigation of the Passive Behaviour of Copper in Weakly Acid and Alkaline Solutions and the Examination of the Passive Film by ESCA and ISS”, Electrochimica Acta, 25: 839-850, 1980.
International Search Report Dated Nov. 16, 2004 From the International Searching Authority Re.: Application No. PCT/IL04/00310.
Written Opinion Dated Nov. 16, 2004 From the International Searching Authority Re.: Application No. PCT/IL04/00310.
Prasad et al. “Chemical Mechanical Planarization of Copper in Alkaline Slurry With Uric Acid as Inhibitor”, Electrochimica Acta, 52: 6353-6358, Apr. 2007.
Response Dated Feb. 4, 2010 to Official Action of Nov. 4, 2009 From the US Patent and Trademark Office Re.: U.S. Appl. No. 10/551,714.
Abelev et al. “Enhanced Copper Surface Protection in Aqueous Solutions Containing Short-Chain Alkanoic Acid Potassium Salts”, Langmuir, 23: 11281-11288, Jul. 2007.
Abelev et al. “Potassium Sobate Solutions as Copper Chemical Mechanical Planarization (CMP) Based Slurries”, Electrochimica Acta, 52: 5150-5158, Sep. 2006.
Abelev et al. “Potassium Sorbate—A New Aqueous Copper Corrosion Inhibitor. Electrochemical and Spectroscopic Studies”, Electrochimica Acta, 52: 1975-1982, Feb. 2007.
Abelev et al. “Reprint of ‘Potassium Sorbate Solutions as Copper Chemical Mechanical Planarization (CMP) Based Slurries’”, Electrochimica Acta, 53: 1021-1029, Sep. 2007.
Ein-Eli et al. “Food Preservatives Serving as Nonselective Metal and Alloy Corrosion Inhibitors”, Electrochemical and Solid-State Letters, 9(1): B5-B7, Nov. 2005.
Ein-Eli et al. “Review on Copper Chemical-Mechanical Polishing (CMP) and Post-CMP Cleaning in Ultra Large System Integrated (ULSI)—An Electrochemical Perspective”, Electrochimica Acta, 52: 1825-1838, Jul 2007.
Gorantla et al. “Role of Amine and Carboxyl Functional Groups of Complexing Agents in Slurries for Chemical Mechanical Polishing of Copper”, Journal of The Electrochemical Society, 152(12): G912-G916, 2005.
Hariharaputhiran et al. “Hydroxyl Radical Formation in H2O2-Amino Acid Mixtures and Chemical Mechanical Polishing of Copper”, Journal of The Electrochemical Society, 147(10): 3820-3826, 2000.
Patri et al. “Role of the Functional Groups of Complexing Agents in Copper Slurries”, Journal of the Electrochemical Society, 153(7): G650-G659, 2006.

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