Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1995-12-14
1998-11-24
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438693, 438697, 438754, 216105, 252 791, H01L 21302, C09K 1300
Patent
active
058406298
ABSTRACT:
There is described a slurry for use in chemical mechanical polishing of copper layers in integrated circuit fabrication. The slurry includes a chromate oxidant, such as sodium chromate tetrahydrate (Na.sub.2 CrO.sub.4.4H.sub.2 O). The chromate oxidant provides a slightly basic slurry solution that enhances removal characteristics for copper layers. In one embodiment, the slurry has a pH between about 6 and about 9.
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Alanko Anita
Breneman R. Bruce
Sematech Inc.
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