Copper base lead material for leads of semiconductor devices

Details Copper base lead material for leads of semiconductor devices Copper base lead material for leads of semiconductor devices

1987-03-26

1988-06-07

Rutledge, L. Dewayne

Alloys or metallic compositions

Aluminum base

Copper containing

357 70, 420471, 420472, 420473, H01L 2350, C22C 902

Patent

active

047500298

ABSTRACT:
A copper base lead material for leads of a semiconductor device, which consists essentially of from 0.05 to 0.25 percent by weight tin, from 0.01 to 0.2 percent by weight silver, from 0.025 to 0.1 percent by weight phosphorus, from 0.05 to 0.2 percent by weight magnesium, and the balance of copper and inevitable impurities, wherein the P/Mg ratio is within a range from 0.5 to 0.85, preferably within a range from 0.60 to 0.85, so as to form a compound of magnesium and phosphorus or Mg.sub.3 P.sub.2. The copper base lead material possesses satisfactory properties required of a metal material for leads in semiconductor devices, such as strength, thermal resistance, and stampability, and further possesses excellent heat radiation to an extent suitable for use as leads of semiconductor devices having high wiring densities. The invention also includes the semiconductor device containing said leads.

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