Copper alloy sputtering target process for producing the...

Metal treatment – Stock – Copper base

Reexamination Certificate

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C148S426000, C420S470000, C420S471000, C420S489000

Reexamination Certificate

active

07740721

ABSTRACT:
Provided is a copper alloy sputtering target containing 0.01 to (less than) 0.5 wt % of at least 1 element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.

REFERENCES:
patent: 4822560 (1989-04-01), Oyama et al.
patent: 5023698 (1991-06-01), Kobayashi et al.
patent: 5580669 (1996-12-01), Beers et al.
patent: 6113761 (2000-09-01), Kardokus et al.
patent: 6143427 (2000-11-01), Andler
patent: 6391163 (2002-05-01), Pavate et al.
patent: 6451135 (2002-09-01), Takahashi et al.
patent: 7507304 (2009-03-01), Okabe et al.
patent: 2002/0024142 (2002-02-01), Sekiguchi
patent: 2004/0004288 (2004-01-01), Sekiguchi
patent: 2005/0121320 (2005-06-01), Okabe et al.
patent: 2005/0285273 (2005-12-01), Okabe et al.
patent: 2007/0051624 (2007-03-01), Okabe et al.
patent: 2007/0209547 (2007-09-01), Irumata et al.
patent: 2009/0139863 (2009-06-01), Okabe et al.
patent: 2009/0140430 (2009-06-01), Okabe et al.
patent: 0601509 (1994-06-01), None
patent: 49-023127 (1974-03-01), None
patent: 61-231131 (1986-10-01), None
patent: 63-065039 (1988-03-01), None
patent: 01096374 (1989-04-01), None
patent: 01180976 (1989-07-01), None
patent: 05-311424 (1993-11-01), None
patent: 06177117 (1994-06-01), None
patent: 10-060633 (1998-03-01), None
patent: 10-330927 (1998-12-01), None
patent: 11-158614 (1999-06-01), None
patent: 2000-087158 (2000-03-01), None
patent: 2000-239836 (2000-09-01), None
patent: 2001-284358 (2001-10-01), None
patent: 2002-004048 (2002-01-01), None
patent: 2002-294437 (2002-10-01), None
patent: 2002-294438 (2002-10-01), None
patent: WO 03/064722 (2003-08-01), None
One page English Language Abstract of JP 11-186273 A, Jul. 9, 1999.
One page English Language Abstract of JP 06-140398 A, May 20, 1994.
One page English Language Abstract of JP 02-119140 A, May 7, 1990.
One page English Language Abstract of JP 02-050432 A, Feb. 20, 1990.
One page English Language Abstract of JP 2862727 B2, Mar. 3, 1999.

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