Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2011-04-19
2011-04-19
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S672000
Reexamination Certificate
active
07928541
ABSTRACT:
A QFN package is provided with a lead frame formed by processing a copper alloy sheet containing 0.01 to 0.50% by mass Fe, 0.01 to 0.20% by mass P, and Cu and inevitable impurities as other components, having a micro Vickers hardness of 150 or above, a uniform elongation of 5% or below and a local elongation of 10% or below, or a copper alloy sheet containing 0.05 to 2% by mass Ni, 0.001 to 0.3% by mass P, 0.005 to 5% by mass Zn, and Cu and inevitable impurities as other components, having a micro Vickers hardness of 150 or above, a uniform elongation of 5% or below and a local elongation of 10% or below. Lead burrs formed during the dicing of the QFN package are short, and a dicing blade used for dicing the QFN package is abraded at a low wear-out rate.
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Katsura Shinya
Miwa Yosuke
Nishimura Masayasu
Ozaki Ryoichi
(Kobe Steel, Ltd.)
Clark S. V
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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