Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1992-01-08
1993-09-07
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257741, 257762, H01L 2348, H01L 2954
Patent
active
052432220
ABSTRACT:
A method for providing vias, lines and other recesses in VLSI interconnection structures with copper alloys to create a thin layer of an oxide of an alloying element on the surface of the deposited alloy and on portions of the alloy which are in contact with an oxygen containing dielectric is disclosed. The present invention is also directed to VLSI interconnection structures which utilize this copper alloy and thin oxide layer in their vias, lines and other recesses. The oxide layer eliminates the need for diffusion barrier and/or adhesion layers and provides corrosion resistance for the deposited copper alloy. VLSI devices utilizing this copper alloy in the vias, lines and other recesses interconnecting semiconductor regions, devices and conductive layers on the VLSI device are significantly improved.
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Harper James M. E.
Holloway Karen L.
Kwok Thomas Y.
Dinh Son
International Business Machines - Corporation
LaRoche Eugene R.
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