Copper alloy lead material for use in semiconductor device

Details Copper alloy lead material for use in semiconductor device Copper alloy lead material for use in semiconductor device

1986-09-03

1988-06-07

Rutledge, L. Dewayne

Alloys or metallic compositions

Copper base

420473, 420477, 420478, 420479, 420480, 420482, 420489, 420492, 420495, C07C 900

Patent

active

047495480

ABSTRACT:
Copper alloy lead materials used in the fabrication of semiconductor devices such as ICs and LSIs are required to have a tensile strength of 40 kgf/mm.sup.2 or more, an elongation of 4% or more, an electrical conductivity of 50% IACS or more, and a softening point of 400.degree. C. or higher.
The copper alloy lead material of the present invention exhibits even higher degrees of tensile strength and elongation and yet satisfy the values of electrical conductivity and softening point that are required for Cu alloy lead materials to be used with ordinary semiconductor devices. Therefore, the Cu alloy lead material of the present invention is applicable not only to ordinary semiconductor devices but also to those with higher packing densities while displaying equally superior performance.

REFERENCES:
patent: 2479311 (1949-08-01), Christensen et al.
patent: 3928028 (1975-12-01), Yarwood

Affiliated with

Also associated with

Rating

Copper alloy lead material for use in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Copper alloy lead material for use in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper alloy lead material for use in semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-843839