Copper alloy lead material for leads of a semiconductor device

Alloys or metallic compositions – Copper base – Zinc containing

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29569R, 148 33, C22C 904

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046684719

ABSTRACT:
A copper alloy lead material for leads of a semiconductor device, which consists essentially of from 2 to 2.4 percent by weight iron, from 0.001 to 0.1 percent by weight phosphorus, from 0.01 to 1 percent by weight zinc, from 0.001 to 0.1 percent by weight magnesium, and the balance of copper and inevitable impurities. The copper alloy lead material possesses satisfactory properties such as elongation and electrical conductivity required of a material for leads in a semiconductor device, and further exhibits excellent strength and heat resistance enough to be used as leads in semiconductor devices having high wiring densities, and at the same time possesses improved soldering reliability to the substrate of the semiconductor device as compared to a conventional copper alloy lead material.

REFERENCES:
patent: 4269623 (1981-05-01), Inoue

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