Copper activator solution and method for semiconductor seed...

Compositions: coating or plastic – Coating or plastic compositions – Metal-depositing composition or substrate-sensitizing...

Reexamination Certificate

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C427S098300, C427S304000, C427S305000, C427S306000, C427S437000, C427S443100, C438S689000

Reexamination Certificate

active

06875260

ABSTRACT:
The present invention is directed to an activator solution and method for activating a copper-seeded surface to facilitate plating of copper onto the copper-seeded surface. The activator solution is prepared by heating a precursor solution to a temperature of at least about 95° C., and maintaining the precursor solution at said temperature for at least about 30 minutes, wherein the precursor solution comprises water, chlorine ions, copper ions, tin (II) ions, and an antioxidant compound which substantially prevents the oxidation of the tin (II) ions to tin (IV) ions.

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