Copolymer, photoresist compositions thereof and deep UV...

Stock material or miscellaneous articles – Composite – Of silicon containing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S287100, C430S270100, C430S286100, C430S311000, C526S321000, C526S328500, C526S347000, C526S268000, C526S279000, C528S026000, C528S032000, C528S041000

Reexamination Certificate

active

06916543

ABSTRACT:
Novel copolymers suitable for forming the top layer photoimagable coating in a deep U V. particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

REFERENCES:
patent: 5484867 (1996-01-01), Lichtenhan et al.
patent: 6420084 (2002-07-01), Angelopoulos et al.
patent: 6664024 (2003-12-01), Nguyen et al.
patent: 2002/0013059 (2002-01-01), Kishimura et al.
patent: 2002/0128414 (2002-09-01), James, Jr. et al.
patent: 2002/0182541 (2002-12-01), Gonsalves
patent: 2004/0068075 (2004-04-01), Lichtenhan et al.
Feher et al., “Facile Syntheses of New Incompletely Condensed Polyhedral Oligosilsesquioxane[c-(C5H9)7SI7O9(OH)3], [c-C7H13)7SI7O9(OH)3],and[c-C7H13)6O7(OH)4]”, Organometallics, 1991, pp. 2526-2528.
Joseph C. Salamone, “Silsesquioxane-Based Polymers”, Polymeric Materials Encyclopedia vol. 10, Q-S, 1996, pp. 7768-7778.
Lichtenhan et al., “Linear Hybrid Polymer Building Blocks: Methacrylate-Functionalized Polyhedral Oligomeric Silsesquioxane Monomers and Polymers”, Macromolecules 1995, pp. 8435-8437.
Lichtenhan et al. “Nanostructured chemicals: A new era in chemical technology”, Chemical Innovation, Jan. 2001, vol. 31, No. 1 pp. 1-5.
Joseph D. Lichtenhan, “Polyhedral Oligomeric Silsesquioxnes: Building Blocks for Silsesquioxane-Based Polymers and Hybrid Materials”, Inorg. Chem. vol. 17, No. 2, 1994, pp. 115-130.
Wu et al., “Novel Positive-Tone Chemically Amplified Resists with Photoacid Generator in the Polymer Chains”, Adv. Mater., 13, No. 9 May 2001, pp. 670-672.
Wu et al., “Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reative ion etching resistance”, J. Vac. Sci. Techno. B 19 (3), May/Jun. 2001, pp. 851-855.
Gonsalves et al., “Organic-Inorganic Nanocomposites: Unique Resists for Nanolithography”, Adv. Mater. 2001, 13, No> 10, May 17, 2001, pp. 703-714.
International Search Report Application No. PCT/US03/34832 dated Apr. 29, 2004.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Copolymer, photoresist compositions thereof and deep UV... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Copolymer, photoresist compositions thereof and deep UV..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copolymer, photoresist compositions thereof and deep UV... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3428904

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.