Coplanar integration of lattice-mismatched semiconductor...

Details Coplanar integration of lattice-mismatched semiconductor... Coplanar integration of lattice-mismatched semiconductor...

2005-08-09

2005-08-09

Chaudhuri, Olik (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000

Reexamination Certificate

active

06927147

ABSTRACT:
A method of bonding lattice-mismatched semiconductors is provided. The method includes forming a Ge-based virtual substrate and depositing on the virtual substrate a CMP layer that forms a planarized virtual substrate. Also, the method includes bonding a Si substrate to the planarized virtual substrate and performing layer exfoliation on selective layers of the planarized virtual substrate producing a damaged layer of Ge. Furthermore, the method includes removing the damaged layer of Ge.

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