Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2007-01-30
2007-01-30
Kebede, Brook (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S714000, C257S720000, C257SE23145
Reexamination Certificate
active
11317298
ABSTRACT:
A cooling system for a semiconductor substrate incudes a plurality of trenches formed from a backside of the semiconductor substrate, and thermally conductive material deposited in the plurality of trenches. A method of forming cooling elements in a semiconductor substrate, includes coating a backside of the semiconductor substrate with a first mask layer, forming a plurality of trench patterns in the first mask layer, etching the semiconductor substrate to form a plurality of trenches along the plurality of trench patterns, and depositing thermally conductive material in the plurality of trenches. Trenches constructed from the backside of a wafer improve efficiency of heat transfer from a front-side to the backside of an integrated-circuit chip. The fabrication of trenches from the backside of the wafer allows for increases in the depth and number of trenches, and provides a means to attach passive and active cooling devices directly to the backside of a wafer.
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Wolf, Silicon Processing for the VLSI Era vol. 2-Process Integration, pp. 51-54, 1990.
Chen Howard Hao
Hsu Louis L.
Shepard, Jr. Joseph F.
F. Chau & Associates LLC
International Business Machines - Corporation
Kebede Brook
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