Cooled optical window for semiconductor wafer heating

Details Cooled optical window for semiconductor wafer heating Cooled optical window for semiconductor wafer heating

1985-07-19

1987-07-14

Bueker, Richard

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219405, 219411, H05B 100

Patent

active

046804471

ABSTRACT:
A vapor deposition system is provided which uses electromagnetic radiation for heating of a semiconductor wafer. The source of the electromagnetic radiation is typically a lamp having a color temperature corresponding to a wavelength in the range of 0.3 to 0.9 micrometers, and generally for a particular semiconductor to an energy greater than the energy required to cause transitions from the valence band to the conduction band of the semiconductor material used to construct the wafer and more preferably to a color temperature corresponding to an energy substantially at or above the energy required for direct (vertical) transitions from the valence band to the conduction band, thereby providing very high absorption of the incident radiation and very efficient direct heating of the wafer. No substrate is required for conducting heat to the wafer. The radiation is directed by a reflector through a window forming one side of the deposition chamber and impinges directly on the surface of the wafer. Although the window is typically chosen to be substantially transparent at the frequencies desired for heating the wafer, some absorption does occur, thereby heating the window as well. To maintain optimum control over the deposition process, the window is typically constructed with two spaced-apart plates and water is pumped therethrough to actively control window temperature.

REFERENCES:
patent: 3105916 (1963-10-01), Marker et al.
patent: 3316387 (1967-04-01), Waldron
patent: 3862397 (1975-01-01), Anderson et al.
patent: 4258658 (1981-03-01), Politycki et al.
patent: 4409511 (1983-10-01), Loda et al.
patent: 4550684 (1985-11-01), Mahawili
"Heat Pulse Annealing of Arsenic-Implanted Silicon with a CW Arc Lamp," by Arnon Gat, IEEE Electron Device Letters, vol. EDL-2, No. 4, Apr. 1981.
"Activation of Arsenic-Implanted Silicon Using an Incoherent Light Source," by R. A. Powell, et al., Applied Physics Letters, vol. 39, No. 2, 15 Jul. 1981.
"Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp," by Kazuo Nishiyama, et al., Japanese Journal of Applied Physics, vol. 19, No. 10, Oct. 1980.
"Incoherent Annealing of Implanted Layers in GaAs," by D. E. Davies et al., IEEE Electron Device Letters, vol. EDL-3, No. 4, Apr. 1982.
"Radiation Annealing of 6aAs Implanted with Si," by Michio Arai, et al., Japanese Journal of Applied Physics, vol. 20, No. 2, Feb. 1981, pp. L124-L126.
AG Associates, Heatpulse, Rapid Wafer Heating System, Copyright 1982, pp. 1-14, (Advertisement).
AG Associates, Heatpulse 2101 advertisement.

Affiliated with

Also associated with

Rating

Cooled optical window for semiconductor wafer heating does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cooled optical window for semiconductor wafer heating, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cooled optical window for semiconductor wafer heating will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1428967