Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1999-05-06
2000-12-12
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 41, 117902, B24B 500
Patent
active
061592854
ABSTRACT:
A new ingot of a desired orientation formed from an original ingot of a different orientation by cutting the new ingot from within the original ingot. In one aspect, to form a <110> ingot from a <100> ingot, a {110} flat is formed on the <100> ingot. The flat is used as a reference for cutting the <100> ingot. The <100> ingot is cut into sections by cutting in a plane perpendicular to the <100> ingot's longitudinal axis and to the flat. A <110> ingot can be formed by grinding a section of the <100> ingot to form a new cylinder. The new cylinder has a longitudinal axis which is perpendicular to the <100> ingot's longitudinal axis and to the flat. The resulting cylinder is a <110> ingot.
REFERENCES:
patent: 3929528 (1975-12-01), Davidson et al.
patent: 5069743 (1991-12-01), Wysocki et al.
patent: 5851928 (1998-12-01), Cripe et al.
Digges, Jr. Thomas G.
Toombs Marshall P.
Hiteshew Felisa
Virginia Semiconductor, Inc.
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