Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1988-02-08
1990-02-13
Sneed, H. M. S.
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
423346, 427228, 4273762, 427399, 427249, 427113, 4272551, 4272554, C01B 3136
Patent
active
049005316
ABSTRACT:
A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.
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Linton Thomas D.
Pak Chung K.
Sneed H. M. S.
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