Convertible multi-function microelectronic logic gate structure

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307362, 307468, H03K 19094

Patent

active

051461170

ABSTRACT:
A plurality of field effect transistors (FETS) (Q.sub.0 A to Q.sub.n-1 A, and Q.sub.0 B to Q.sub.n-1 B) are arranged in a structure (10) to normally perform a first logic function such as NAND. Selectively implanting the channel region (38) of at least one of the FETs (30) with sufficient ions of a predetermined ion species such that the respective FET (30) maintains a constant logic state (constantly turned ON or OFF) for all logical values of applied gate voltage converts the structure (10) to perform a second logic function such as NOR. Alternatively, one of the logic states may be "stuck high" (constant logical high output) or "stuck low" (constant logical low output). The channel implants are substantially undetectable, rendering the structure (10) highly resistant to reverse engineering.

REFERENCES:
patent: 4084105 (1978-04-01), Teranishi et al.
patent: 4482822 (1984-11-01), Kamuro et al.
patent: 4583011 (1986-04-01), Pechar
patent: 4766516 (1988-08-01), Ozdenir et al.

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