Conversion of polycrystalline material to single crystal materia

Details Conversion of polycrystalline material to single crystal materia Conversion of polycrystalline material to single crystal materia

1993-09-24

1996-07-30

Wilczewski, Mary

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

117 7, 117920, 117950, C30B 102

Patent

active

055401821

ABSTRACT:
A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire.

REFERENCES:
patent: 3026210 (1962-03-01), Coble
patent: 3943324 (1976-03-01), Haggerty
patent: 4150317 (1979-04-01), Laska et al.
patent: 4285732 (1981-08-01), Charles et al.
patent: 4444615 (1984-04-01), Matsuzawa et al.
patent: 4519870 (1985-05-01), Matsuzawa et al.
"Alumina: Sintering and Optical Properties", J. G. J. Peelen, PhD Thesis, Technical University of Eindhoven, Netherlands, May 1977, pp. 1-99.

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