Conversion of doped polycrystalline material to single crystal m

Details Conversion of doped polycrystalline material to single crystal m Conversion of doped polycrystalline material to single crystal m

1995-11-03

1996-12-31

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

137 3, 137 4, 137950, C30B 106

Patent

active

055889921

ABSTRACT:
A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.

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Patent Abstracts of Japan, vol. 8, No. 272; JP-A-59 143255.
Patent Abstracts of Japan, vol. 8, No. 272; JP-A-59 143256.

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