Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent
1994-02-14
1996-01-30
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
117 1, 117 7, C30B 2104
Patent
active
054873533
ABSTRACT:
A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.
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Kaliszewski Mary Sue
Levinson Lionel M.
Scott Curtis E.
Breneman R. Bruce
Corwin Stanley C.
Garrett Felisa
General Electric Company
Hawranko George E.
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