Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-03-01
2011-03-01
Vanore, David A (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492230, C250S397000, C250S3960ML, C250S3960ML
Reexamination Certificate
active
07897943
ABSTRACT:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
REFERENCES:
patent: 3541328 (1970-11-01), Enge
patent: 3748612 (1973-07-01), Hashmi et al.
patent: 5350926 (1994-09-01), White et al.
patent: 5834761 (1998-11-01), Okada et al.
patent: 5834786 (1998-11-01), White et al.
patent: 6160262 (2000-12-01), Aoki et al.
patent: 6437350 (2002-08-01), Olson et al.
patent: 6763316 (2004-07-01), Evans
patent: 6930316 (2005-08-01), Nishihashi et al.
patent: 6933507 (2005-08-01), Purser et al.
patent: 7078713 (2006-07-01), White
patent: 7105839 (2006-09-01), White
patent: 7301156 (2007-11-01), Purser et al.
patent: 7326941 (2008-02-01), Chen et al.
patent: 2003/0191899 (2003-10-01), Evans
patent: 2005/0017202 (2005-01-01), White
patent: 2005/0082498 (2005-04-01), White
patent: 2006/0113494 (2006-06-01), Chen et al.
patent: 2006/0169924 (2006-08-01), Purser et al.
patent: 2007/0023697 (2007-02-01), Purser et al.
patent: 1182684 (2002-02-01), None
Panofsky et al. “Magnetic Quadrupole with Rectangular Aperture,”Review of Scientific Instruments, vol. 30. pp. 927-930. (1959).
Scheerer et al. “The Multipole Element of the Q3D Spectograph for Correction of the Kinematic Broadening,”Nuclear Instruments and Methods, vol. 136 pp. 213-224 (1976).
White et al. “The Control of Uniformity in Parallel Ribbon Ion Beams up to 24 Inches in Size.” 1999 Conference Proceedings of Applications of Accelerators in Research and Industry, pp. 830-835. (1999).
White et al. “The Design of Magnets with Nondipole Field Components,”Nuclear Instruments and Methods, vol. A258, pp. 437-442. (1987).
European Patent Office official action, issued for 03 764 775.7-2208, dated Apr. 8, 2008.
White, “New multipole Proposal”, Albion Systems Presentation, Feb. 25, 2003.
White, “Varian VIISta-80 Optics—Proposed Improvements”, Albion Systems Presentation, Feb. 10, 2003.
Hand et al. “Magnetic Quadrupole with Rectangular Aperture” The Review of Scientific Instruments, vol. 30, No. 10, 1959 (pp. 927-930).
Shimamura: “Mass-Analysed Ion Implanter With Parallel-Ribbon Beam for Flat Panel Displays” Mitsui Zosen Tech Rev., No. 168 (1999) Abstract.
International Search Report, International Patent Application No. PCT/US03/22311, mailed Nov. 28, 2003 (3 pages).
Enge Harald A.
Purser Kenneth H.
Turner Norman L.
Smyth Andrew
Vanore David A
Wilmer Cutler Pickering Hale and Dorr LLP
LandOfFree
Controlling the characteristics of implanter ion-beams does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Controlling the characteristics of implanter ion-beams, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlling the characteristics of implanter ion-beams will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2765146