Controlling secondary breakdown in bipolar power transistors

Details Controlling secondary breakdown in bipolar power transistors Controlling secondary breakdown in bipolar power transistors

1981-07-13

1984-04-03

Edlow, Martin H.

357 36, 357 51, 357 34, 357 41, 357 46, H01L 2702, H01L 2972

Patent

active

044411162

ABSTRACT:
A power transistor design that eliminates thermally initiated secondary breakdown in fast, double-diffused transistors is described. The power dissipation capability is made independent of collector voltage, avoiding safe area restrictions below 0.9 BV.sub.CBO.

REFERENCES:
patent: 3740621 (1973-06-01), Carley
patent: 3911472 (1975-10-01), Craft
patent: 3936863 (1976-02-01), Olmstead
patent: 4143392 (1979-03-01), Mylroie
Porter, J. A., IEEE Transactions on Elect. Devices, Sep. 1976, vol. ED23, pp. 1098-1099, "JFET-Transistor Yields Device with Negative Resistance".

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