Controlling method of forming thin film, system for said control

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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427 8, 427 10, 438 7, 438 8, 438 9, 216 60, 216 85, G03F 720, G03F 738, G03F 740, G03F 730

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057472017

ABSTRACT:
A method for irradiating a substrate such as a semiconductor substrate, coated with a photoresist, with light to measure variations in optical properties such as reflectivity, refractive index, transmittance, polarization, spectral transmittance, for determining an optimum photoresist coating condition, an optimum photoresist baking condition, an optimum developing condition or an optimum exposure energy quantity, and forming a photoresist pattern according to the optimum condition. A system for the exposure method, a controlling method of forming a photoresist film by use of the exposure method, and a system for the controlling method, are useful for stabilization of the formation or treatment of the photoresist film, and ensure less variations in the pattern size. Furthermore, even in the case of a thin film other than a photoresist film, the formation or treatment of the thin film can be stabilized by measuring the optical property before and during or after the formation of the thin film and using the measurement results to control the condition for forming the thin film, the etching condition or the coating condition.

REFERENCES:
patent: 4500615 (1985-02-01), Iwai
patent: 4780747 (1988-10-01), Suzuki et al.
patent: 5124216 (1992-06-01), Giapis et al.
W.S. DeForest, Photoresist: Materials and Processes, McGraw-Hill Book Company, New York, N.Y. 1975, pp. 89-100, 131-136, 142, 147-149, 162, 222-246, 248-256.

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